BFT46 datasheet(3/9 Pages) PHILIPS

3 / 9 page

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon FET

BFT46

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Note

1. Mounted on a ceramic substrate of 8 mm

× 10 mm × 0,7 mm.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Drain-source voltage

±VDS

max.

25 V

Drain-gate voltage (open source)

VDGO

max.

25 V

Gate-source voltage (open drain)

−V

GSO

max.

25 V

Drain current

max.

10 mA

Gate current

max.

5 mA

Total power dissipation up to Tamb =40 °C(1)

Ptot

max.

250 mW

Storage temperature range

Tstg

−65 to +150 °C

Junction temperature

max.

150

°C

From junction to ambient(1)

Rth j-a

430 K/W

Gate cut-off current

−V

GS = 10 V; VDS =0

−IGSS

0,2 nA

Drain current

VDS = 10 V; VGS =0

IDSS

0,2 mA

1,5 mA

Gate-source voltage

ID =50 µA; VDS = 10 V

−V

0,1 V

1,0 V

Gate-source cut-off voltage

ID = 0,5 nA; VDS =10V

−V(P)GS

1,2 V

y-parameters at f = 1 kHz;

VDS = 10 V; VGS = 0; Tamb =25 °C

Transfer admittance

 yfs >

1,0 mS

Output admittance

 y

os <

µS

VDS = 10 V; ID = 200 µA; Tamb =25 °C

Transfer admittance

 yfs >

0,5 mS

Output admittance

 y

os <

µS

Input capacitance at f = 1 MHz;

VDS = 10 V; VGS = 0; Tamb =25 °CCis

5pF

Feedback capacitance at f = 1 MHz;

VDS = 10 V; VGS = 0; Tamb =25 °CCrs

1,5 pF

Equivalent noise voltage

VDS = 10 V; ID = 200 µA; Tamb =25 °C

B = 0,6 to 100 Hz

0,5

µV

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