BFT46 datasheet(2/9 Pages) PHILIPS

2 / 9 page

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon FET

BFT46

DESCRIPTION

Symmetrical n-channel silicon

epitaxial planar junction field-effect

transistor in a microminiature plastic

envelope. The transistor is intended

for low level general purpose

amplifiers in thick and thin-film

circuits.

PINNING

Note : Drain and source are

interchangeable.

1 = drain

2 = source

3 = gate

Marking code

BFT46 = M3p

Fig.1 Simplified outline and symbol, SOT23.

handbook, halfpage

Top view

MAM385

QUICK REFERENCE DATA

Drain-source voltage

±VDS

max.

25 V

Gate-source voltage (open drain)

−V

GSO

max.

25 V

Total power dissipation up to Tamb =40 °CPtot

max.

250 mW

Drain current

VDS = 10 V; VGS =0

IDSS

0,2 mA

1,5 mA

Transfer admittance (common source)

ID = 0,2 mA; VDS = 10 V; f = 1 kHz

 yfs >

0,5 mS

Equivalent noise voltage

VDS = 10 V; ID = 200 µA; B = 0,6 to 100 Hz

0,5

µV

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