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BGY205 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BGY205 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 11 page ![]() 1996 May 21 3 Philips Semiconductors Product specification UHF amplifier module BGY205 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). CHARACTERISTICS ZS =ZL =50 Ω;PD = 3 dBm; VS = 6 V; VC ≤ 4 V; f = 880 to 915 MHz; Tmb =25 °C; δ = 1 : 8; tp = 575 µs; unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VS DC supply voltage − 8.5 V VC DC control voltage − 4.5 V PD input drive power − 7mW PL load power − 4W Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IQ leakage current VC = 0.5 V −− 100 µA IC control current adjust VC for PL = 3.5 W −− 500 µA PL load power VC = 4 V 3.5 −− W Gp power gain adjust VC for PL = 3.5 W 32.5 −− dB η efficiency adjust VC for PL = 3.5 W 40 45 − % H2 second harmonic adjust VC for PL = 3.5 W −−−40 dBc H3 third harmonic adjust VC for PL = 3.5 W −−−40 dBc VSWRin input VSWR adjust VC for PL = 3.5 W −− 2:1 stability PD = 0 to 6 dBm; VS =5to8.5 V; VC = 0 to 4 V; PL ≤ 3.5 W; VSWR ≤ 6 : 1 through all phases −−−60 dBc isolation VC = 0.5 V −−−36 dBm control bandwidth R1 = 0; C1 = 0; see Fig.16 1 −− MHz AM-AM conversion PD with 3% AM; f = 100 kHz; PL = 3.5 mW to 3.5 W −− 12 % Pn noise power PL = 3.5 W; bandwidth = 30 kHz; 20 MHz above transmitter band −−−85 dBm ruggedness VS = 8.5 V; adjust VC for PL = 3.5 W; VSWR ≤ 10 : 1 through all phases no degradation |
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