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AM29F800T Datasheet(PDF) 36 Page - Advanced Micro Devices |
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AM29F800T Datasheet(HTML) 36 Page - Advanced Micro Devices |
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36 / 41 page ![]() 36 Am29F800T/Am29F800B 8/18/97 PR E L IM IN A R Y ERASE AND PROGRAMMING PERFORMANCE Notes: 1. The typical erase and programming times assume the following conditions: 25 °C, 5.0 volt V CC, 100,000 cycles. These conditions do not apply to erase/program endurance. Programming typicals assume checkerboard pattern. 2. The maximum erase and programming times assume the following conditions: 90 °C, 4.5 volt V CC, 100,000 cycles. 3. Although Embedded Algorithms allow for longer chip program and erase time, the actual time will be considerably less since bytes program or erase significantly faster than the worst case byte. 4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure. 5. The Embedded Algorithms allow for 2.5 ms byte program time. DQ5 = “1” only after a byte takes the theoretical maximum time to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming Times listed above. LATCHUP CHARACTERISTICS Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time. Parameter Limits Unit Comments Typ (Note 1) Max (Note 2) Sector Erase Time 1.0 8 sec Excludes 00H programming prior to erasure Chip Erase Time (Note 3) 19 152 sec Byte Programming Time (Note 5) 7 300 µs Excludes system-level overhead (Note 4) Word Programming Time (Note 5) 14 600 µs Chip Programming Time (Notes 3, 5) 7.2 21.6 sec Erase/Program Endurance 1,000,000 cycles Minimum 100,000 cycles guaranteed Min Max Input Voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA |
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