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BLF202 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF202 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 16 page ![]() 1999 Oct 20 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 40 V VGS gate-source voltage − 20 V ID DC drain current − 1A Ptot total power dissipation Tmb ≤ 85 °C − 5.7 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb ≤ 85 °C, Ptot = 5.7 W 20.5 K/W handbook, halfpage MCD789 110 VDS (V) ID (A) 102 10 1 10−1 10−2 (1) (2) Fig.2 DC SOAR. (1) Current is this area may be limited by RDS(on). (2) Tmb =85 °C. |
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