BLF202 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1999 Oct 20

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF202

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 3 mA; VGS =0

−−

VGS(th)

gate-source threshold voltage

ID = 3 mA; VDS =10V

−

4.5

IDSS

drain-source leakage current

VGS = 0; VDS = 12.5 V

−−

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

IDSX

on-state drain current

VGS = 15 V; VDS =10V

−

1.3

−

RDSon

drain-source on-state resistance

ID = 0.3 A; VGS =15V

−

3.5

Ω

gfs

forward transconductance

ID = 0.3 A; VDS = 10 V

135

−

Cis

input capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz −

5.3

−

Cos

output capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz −

7.8

−

Crs

feedback capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz −

1.8

−

handbook, halfpage

−5

MGP111

110

102

103

T.C.

(mV/K)

ID (mA)

Fig.3

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values.

VDS =10V.

handbook, halfpage

1600

800

1200

400

420

MGP112

812

(mA)

VGS (V)

Fig.4

Drain current as a function of gate-source

voltage; typical values.

VDS = 10 V; Tj =25 °C.

BLF202 Datasheet(PDF) 4 Page - NXP Semiconductors

BLF202 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL