BLF278 datasheet(12/21 Pages) PHILIPS

12 / 21 page

1996 Oct 21

Philips Semiconductors

Product Speciﬁcation

VHF push-pull power MOS transistor

BLF278

Fig.14 Input impedance as a function of frequency

(series components), typical values per

section.

Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;

RGS =4 Ω (per section); PL = 300 W.

handbook, halfpage

125

f (MHz)

175

(

Ω)

−1

−2

MGE685

Fig.15 Load impedance as a function of frequency

(series components), typical values per

section.

Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;

RGS =4 Ω (per section); PL = 300 W.

handbook, halfpage

125

f (MHz)

175

(

Ω)

MGE686

Fig.16 Definition of MOS impedance.

handbook, halfpage

MBA379

Fig.17 Power gain as a function of frequency,

typical values per section.

Class-B operation; VDS = 50 V; IDQ =2 × 0.1 A;

RGS =4 Ω (per section); PL = 300 W.

handbook, halfpage

125

175

MGE687

f (MHz)

(dB)

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