BLF278 datasheet(4/21 Pages) PHILIPS

4 / 21 page

1996 Oct 21

Philips Semiconductors

Product Speciﬁcation

VHF push-pull power MOS transistor

BLF278

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor section

V(BR)DSS

drain-source breakdown voltage VGS = 0; ID =50mA

110

−−

IDSS

drain-source leakage current

VGS = 0; VDS =50V

−−

2.5

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

VDS =10V; ID =50mA

−

4.5

∆V

gate-source voltage difference

of both sections

VDS =10V; ID =50mA

−−

100

gfs

forward transconductance

VDS =10V; ID = 5 A

4.5

6.2

−

gfs1/gfs2

forward transconductance ratio

of both sections

VDS =10V; ID =5A

0.9

−

1.1

RDSon

drain-source on-state resistance VGS = 10 V; ID =5A

−

0.2

0.3

Ω

IDSX

drain cut-off current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

480

−

Cos

output capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

190

−

Crs

feedback capacitance

VGS = 0; VDS = 50 V; f = 1 MHz

−

Cd-f

drain-ﬂange capacitance

−

5.4

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values per section.

VDS =10V.

handbook, halfpage

−5

10−2

10−1

MGE623

110

−4

−3

−2

−1

T.C.

(mV/K)

ID (A)

Fig.5

Drain current as a function of gate-source

voltage; typical values per section.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

(A)

VGS (V)

MGE622

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