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BLF278 Datasheet(PDF) 13 Page - NXP Semiconductors |
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BLF278 Datasheet(HTML) 13 Page - NXP Semiconductors |
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13 / 21 page ![]() 1996 Oct 21 13 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 Class-AB operation RF performance in CW operation in a common source push-pull test circuit. Th =25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω; (VDS = 50 V). Ruggedness in class-AB operation The BLF278 is capable of withstanding a load mismatch corresponding to VSWR =7:1 through all phases under the conditions: VDS = 50 V; f = 225 MHz at rated output power. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) η D (%) CW, class-AB 225 50 2 × 0.5 250 >14 typ. 16 >50 typ. 55 |
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