BLF378 datasheet(7/16 Pages) PHILIPS

7 / 16 page

1998 Jul 29

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF378

Fig.9

Power gain as a function of load power;

typical values per section.

Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).

(1) Th =25 °C.

(2) Th =70 °C.

handbook, halfpage

100

200

300

MGE614

(dB)

PL (W)

(2)

(1)

Fig.10 Efficiency as a function of load power;

typical values per section.

Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).

(1) Th =25 °C.

(2) Th =70 °C.

handbook, halfpage

ηD

(%)

100

200

PL (W)

300

MGE612

(2)

(1)

Fig.11 Load power as a function of input power;

typical values per section.

Class-AB operation; VDS = 50 V; IDQ =2 × 0.5 A; f = 225 MHz;

ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).

(1) Th =25 °C.

(2) Th =70 °C.

handbook, halfpage

400

300

100

200

MGE613

(W)

Pi (W)

(1)

(2)

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