1998 Jul 29

3

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF378

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section unless otherwise specified

drain-source voltage

−

110

V

gate-source voltage

−±20

V

drain current (DC)

−

18

A

500

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to mounting base total device; both sections

equally loaded

0.35

K/W

thermal resistance from mounting base to heatsink total device; both sections

equally loaded

0.15

K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

100

1

10

100

(1)

500

I

D

(A)

V

(V)

DS

MRA988

(2)

Fig.3 Power derating curves.

Total device; both sections equally loaded.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0

40

80

160

500

0

400

MGE616

120

300

200

100

Ptot

(W)

Th (°C)

(2)

(1)