BLV862 datasheet(9/12 Pages) PHILIPS

9 / 12 page

1999 Jun 25

Philips Semiconductors

Product speciﬁcation

UHF linear push-pull power transistor

BLV862

Fig.10 Input impedance (per section) as function of

frequency (series components);

typical values.

Th =25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).

handbook, halfpage

400

500

900

−1

600

700

800

MGG814

f (MHz)

(

Ω)

Fig.11 Load impedance (per section) as function of

frequency (series components);

typical values.

Th =25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).

handbook, halfpage

400

500

900

−1

600

700

800

MGG815

f (MHz)

(

Ω)

Fig.12 Power gain as a function of frequency;

typical values.

Th =25 °C; VCE = 28 V; ICQ = 0.8 A; PL = 150 W (total device).

handbook, halfpage

400

500

900

600

700

800

MGG816

f (MHz)

(dB)

Fig.13 Definition of transistor impedance.

handbook, halfpage

MBA451

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