1999 Jun 25

3

Philips Semiconductors

Product specification

UHF linear push-pull power transistor

BLV862

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Thermal resistance is determined under specified RF operating conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

65

V

collector-emitter voltage

open base

−

30

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

25

A

total power dissipation

−

350

W

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to mounting base

0.5

K/W

thermal resistance from mounting base to heatsink

note 1

0.15

K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

10

1

MBK231

110

VCE (V)

IC

(A)

(1)

(2)

Total device; both sections equally loaded.

(1) Continuous operation.

(2) Short time operation during mismatch.

Fig.3 Power derating curves.

handbook, halfpage

0

40

80

160

400

Ptot

(W)

300

100

0

200

MGD528

120

Th (°C)

(2)

(1)