BLV862 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Jun 25

Philips Semiconductors

Product speciﬁcation

UHF linear push-pull power transistor

BLV862

CHARACTERISTICS

Values apply to either transistor section; Tj =25 °C unless otherwise speciﬁed.

Note

1. The value of Cc is that of the die only, it is not measurable because of the internal matching network.

APPLICATION INFORMATION

RF performance at Th =25 °C in a common emitter push-pull class-AB test circuit; note 1.

Note

1. See application note

“AN98014 in handbook SC19b.”

Ruggedness in class-AB operation

The BLV862 is capable of withstanding a load mismatch corresponding to VSWR =2:1 through all phases under the

conditions: Th =25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.8 A; PL = 150 W; Rth mb-h = 0.15 K/W.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IE = 0; IC =60mA

−−

V(BR)CEO

collector-emitter breakdown voltage

IB = 0; IC = 150 mA

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 3 mA; IC =0

−−

ICBO

collector-base leakage current

VCB =28V

−−

5mA

hFE

DC current gain

IC = 4.5 A; VCE =10V

−

140

−

∆h

DC current gain ratio of both sections

IC = 4.5 A; VCE = 10 V

0.67

−

1.5

−

collector capacitance

IE =ie= 0; VCE =28V;

f = 1 MHz; note 1

−

MODE OF OPERATION

(MHz)

VCE

(V)

ICQ

(A)

(W)

(dB)

ηC

(%)

∆Gp

(dB)

CW class-AB

860

0.8

150

≥8

typ. 9

≥45

typ. 52

≤1

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