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BLW50F Datasheet(PDF) 9 Page - NXP Semiconductors

Part # BLW50F
Description  HF/VHF power transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLW50F Datasheet(HTML) 9 Page - NXP Semiconductors

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August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
Fig.11 Intermodulation distortion as a function of
output power(1).
handbook, halfpage
025
50
75
−20
−40
−30
MGP475
d3, d5
(dB)
d3
P.E.P. (W)
d5
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th =25 °C; typical values.
Fig.12 Double-tone efficiency and power gain as a
function of output power.
handbook, halfpage
025
50
75
50
0
25
MGP476
20
0
10
Gp
(dB)
P.E.P. (W)
ηdt
ηdt
(%)
Gp
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th =25 °C; typical values.
Ruggedness in s.s.b. operation
The BLW50F is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 45 W (P.E.P.) under
the following conditions:
VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W.



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