August 1986

3

Philips Semiconductors

Product specification

HF/VHF power transistor

BLW50F

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

peak value

max.

110 V

Collector-emitter voltage (open base)

max.

55 V

Emitter-base voltage (open collector)

max.

4 V

Collector current (average)

max.

2,5 A

Collector current (peak value); f

> 1 MHz

max.

7,5 A

D.C. and r.f. (f

max.

94 W

Storage temperature

−65 to + 150 °C

Operating junction temperature

max.

200

°C

Fig.2 D.C. SOAR.

handbook, halfpage

MGP466

10

1

1

10

VCE (V)

IC

(A)

Tmb = 25 °C

Th = 70 °C

I Continuous d.c. and r.f. operation

II Short-time operation during mismatch

Fig.3 Power derating curves vs. temperature.

handbook, halfpage

0

150

100

50

0

100

MGP467

50

Th (°C)

Prf

(W)

ΙΙ

Ι

THERMAL RESISTANCE

From junction to mounting base

(d.c. and r.f. dissipation)

=

2,1 K/W

From mounting base to heatsink

=

0,3 K/W