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BSP145 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BSP145 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 9 page ![]() 1995 Apr 24 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 Fig.6 Capacitance as a function of drain source voltage; typical values. VGS =0. Tj =25 °C. f = 1 MHz. handbook, halfpage 0 120 80 40 0 10 20 30 MGC431 C (pF) V (V) DS Crss C iss Coss Fig.7 Typical output characteristics. Tj =25 °C. handbook, halfpage 04 12 1 0.8 0.4 0.2 0 0.6 MGC436 I D (A) V (V) DS 16 8 V = 10 V GS 4.5 V 4 V 6 V 5 V Fig.8 Typical transfer characteristics. VDS =10V. Tj =25 °C. handbook, halfpage 05 10 1 0 0.5 MGC435 I D (A) V (V) GS Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. ID =10mA. Tj =25 °C. handbook, halfpage 0 15 30 05 10 R DS ( Ω) V (V) GS MGC438 on |
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