BSP145 datasheet(3/9 Pages) PHILIPS

3 / 9 page

1995 Apr 24

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode

vertical D-MOS transistor

BSP145

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Device mounted on an epoxy printed-circuit board, 40

× 40 × 1.5 mm; mounting pad for drain lead minimum 6 cm2.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

450

VGSO

gate-source voltage

open drain

−±20

drain current

−

250

IDM

peak drain current

−

Ptot

total power dissipation

up to Tamb =25 °C; note 1

−

1.5

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

83.3

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA

450

−−

VGSth

gate-source threshold voltage

VDS =VGS; ID =1mA

IDSS

drain-source leakage current

VGS = 0; VDS = 350 V

−−

µA

IGSS

gate leakage current

VDS = 0; VGS = ±20 V

−−±100

RDSon

drain-source on-state resistance

VGS =10V; ID = 100 mA

−

Ω

yfs

forward transfer admittance

VDS = 25 V; ID =250 mA

200

−−

Ciss

input capacitance

VGS = 0; VDS =25V; f=1MHz

−

120

Coss

output capacitance

VGS = 0; VDS =25V; f=1MHz

−

Crss

reverse transfer capacitance

VGS = 0; VDS =25V; f=1MHz

−

25pF

Switching times (see Figs 2 and 3)

ton

turn-on time

VGS =0to10V; VDD = 200 V;

ID = 100 mA

−−

toff

turn-off time

VGS =10to0V; VDD =200 V;

ID = 100 mA

−−

100

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