P4532VG datasheet(2/8 Pages) ETC1

2 / 8 page

JUL-26-2004

N- & P-Channel Enhancement Mode

Field Effect Transistor(Preliminary)

P4532VG

SOP-8

Lead-Free

NIKO-SEM

VDS = 0V, VGS = ±20V

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

N-Ch

P-Ch

±100

VDS = 24V, VGS = 0V

VDS = -24V, VGS = 0V

N-Ch

P-Ch

-1

VDS = 20V, VGS = 0V, TJ = 55 °C

Zero Gate Voltage Drain Current

IDSS

VDS = -20V, VGS = 0V, TJ = 55 °C

N-Ch

P-Ch

-10

µA

VDS = 5V, VGS = 10V

On-State Drain Current

ID(ON)

VDS =-5V, VGS = -10V

N-Ch

P-Ch

-20

VGS = 4.5V, ID = 3A

VGS = -4.5V, ID = -4A

N-Ch

P-Ch

VGS = 10V, ID = 4A

Drain-Source

On-State

Resistance

RDS(ON)

VGS = -10V, ID = -5A

N-Ch

P-Ch

mΩ

VDS = 5V, ID = 3A

Forward Transconductance

gfs

VDS = -5V, ID = -5A

N-Ch

P-Ch

DYNAMIC

Input Capacitance

Ciss

N-Ch

P-Ch

790

690

Output Capacitance

Coss

N-Ch

P-Ch

175

310

Reverse Transfer Capacitance

Crss

N-Channel

VGS = 0V, VDS = 10V, f = 1MHz

P-Channel

VGS = 0V, VDS = -10V, f = 1MHz N-Ch

P-Ch

Total Gate Charge

N-Ch

P-Ch

Gate-Source Charge

Qgs

N-Ch

P-Ch

0.8

2.2

Gate-Drain Charge

Qgd

N-Channel

VDS = 0.5V(BR)DSS, VGS = 10V,

ID = 3A

P-Channel

VDS = 0.5V(BR)DSS, VGS = -10V,

ID = -5A

N-Ch

P-Ch

1.0

1.9

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