P4532VG datasheet(1/8 Pages) ETC1

Part #	P4532VG

Description	N- & P-Channel Enhancement Mode Field Effect Transistor(Preliminary)

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Manufacturer	ETC1 [List of Unclassifed Manufacturers]

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1

JUL-26-2004

N- & P-Channel Enhancement Mode

Field Effect Transistor(Preliminary)

P4532VG

SOP-8

Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

N-Channel P-Channel UNITS

Drain-Source Voltage

VDS

30

-30

V

Gate-Source Voltage

VGS

±20

V

TC = 25 °C

4

-5

Continuous Drain Current

TC = 70 °C

ID

3

-4

Pulsed Drain Current

1

IDM

12

-20

A

TC = 25 °C

2

Power Dissipation

TC = 70 °C

PD

1.3

W

Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RθJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

2Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

LIMITS

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX

STATIC

VGS = 0V, ID = 250µA

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250µA

N-Ch

P-Ch

30

-30

VDS = VGS, ID = 250µA

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250µA

N-Ch

P-Ch

1

-1

1.5

-1.5

2.5

-2.5

V

G : GATE

D : DRAIN

S : SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

N-Channel

30

60mΩ

4A

P-Channel

-30

45mΩ

-5A

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