TC237B

680-

× 500-PIXEL CCD IMAGE SENSOR

SOCS063 – APRIL 2001

1

POST OFFICE BOX 655303

Sensor for NTSC Black and White

Applications

Sensing Area Compatible With Electronic

Centering

– Progressive Scan

– Interlaced Scan

– Dual-Line Readout

– Image Area Line Summing

– Smear Subtraction

From 1/60 – 1/50,000 s

Antiblooming

Burn-In, Residual Imaging, Image

Distortion, Image Lag, or

Microphonics

description

The TC237B is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip

black and white National Television Standards Committee (NTSC) TV, computer, and special-purpose

applications that require low cost and small size.

The image-sensing area of the TC237B device is configured into 500 lines with 680 elements in each line.

Twenty-two elements are provided in each line for dark reference. The antiblooming feature of the sensor is

based on an advanced lateral overflow drain concept. The sensor can be operated in a true interlace mode as

a 658(H)

× 496(V) sensor with a low dark current. An important feature of the TC237B high-resolution sensor

is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image transfer

capability and a continuous electronic exposure control without the loss of sensitivity and resolution inherent

in other technologies. Charge voltage is converted to signal voltage at 13

µV per electron by a high-performance

structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise,

two-stage, source-follower amplifier to provide high-output drive capability.

The TC237B sensor is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides

devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking.

The TC237B sensor is characterized for operation from – 10

°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together

or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no

circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent

damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is

allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling

Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

Copyright

 2001, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

DUAL-IN-LINE PACKAGE

(TOP VIEW)

ODB 1

IAG2 2

SUB 3

ADB 4

OUT1 5

OUT2 6

12 IAG1

11 SAG

10 SAG

9 SUB

8 SRG

7 RST

TI is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.