GS66504B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

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Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)

Parameters

Sym.

Min.

Typ.

Max.

Units Conditions

Drain-to-Source Blocking Voltage

V(BL)DSS

650

V

VGS = 0 V

IDSS = 25

µA

Drain-to-Source On Resistance

RDS(on)

100

130

m

Ω

VGS = 6 V, TJ = 25 °C

IDS = 4.5 A

Drain-to-Source On Resistance

RDS(on)

258

m

Ω

VGS = 6 V. TJ = 150 °C

IDS = 4.5 A

Gate-to-Source Threshold

VGS(th)

1.1

1.7

2.6

V

VDS = VGS

IDS = 3.5 mA

Gate-to-Source Current

IGS

80

µA

VGS = 6 V, VDS = 0 V

Gate Plateau Voltage

Vplat

3

V

VDS = 400 V

IDS = 15 A

Drain-to-Source Leakage Current

IDSS

1

25

µA

VDS = 650 V, VGS = 0 V

TJ = 25 °C

Drain-to-Source Leakage Current

IDSS

200

µA

VDS = 650 V, VGS = 0 V

TJ = 150 °C

Internal Gate Resistance

RG

1.4

Ω

f = 5MHz, open drain

Input Capacitance

CISS

120

pF

VDS = 400 V

VGS = 0 V

f = 100 kHz

Output Capacitance

COSS

31

pF

Reverse Transfer Capacitance

CRSS

1.1

pF

Effective Output Capacitance,

Energy Related (Note 4)

CO(ER)

47

pF

VGS = 0 V

VDS = 0 to 400 V

Effective Output Capacitance,

Time Related (Note 5)

CO(TR)

75

pF

Total Gate Charge

QG

3.3

nC

VGS = 0 to 6 V

VDS = 400 V

Gate-to-Source Charge

QGS

0.9

nC

Gate-to-Drain Charge

QGD

1.4

nC

Output Charge

QOSS

30

nC

VGS = 0 V

VDS = 400 V

Reverse Recovery Charge

QRR

0

nC

Output Capacitance Stored Energy

EOSS

3.8

µJ

VDS = 400 V, VGS = 0 V

f = 100 kHz

(4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated VDS

(5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS.