GS66504B datasheet(1/14 Pages) GAN

Part #	GS66504B

Description	Bottom-side cooled 650 V E-mode GaN transistor

PDF	14 Pages

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Manufacturer	GAN [GaN Systems Inc.]

Direct Link	https://gansystems.com/

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GS66504B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

1

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Package Outline

Features

•

650 V enhancement mode power transistor

•

Bottom-side cooled configuration

•

RDS(on) = 100 mΩ

•

IDS(max) = 15 A

•

Ultra-low FOM die

•

Low inductance GaNPX® package

•

Simple gate drive requirements (0 V to 6 V)

•

Transient tolerant gate drive (-20 V / +10 V)

•

Very high switching frequency (> 10 MHz)

•

Fast and controllable fall and rise times

•

Reverse current capability

•

Zero reverse recovery loss

•

Small 5.0 x 6.6 mm2 PCB footprint

•

RoHS3 (6 + 4) compliant

Applications

• AC-DC Converters

• DC-DC converters

• Uninterruptable Power Supplies

• Industrial Motor Drives

• Appliance Motor Drives

• Fast Battery Charging

• Class D Audio amplifiers

• Power Adapters

• Wireless Power Transfer

Description

The GS66504B is an enhancement mode GaN-on-silicon

power transistor. The properties of GaN allow for high

current, high voltage breakdown and high switching

frequency. GaN Systems innovates with industry leading

advancements such as patented Island Technology®

and GaNPX® packaging. Island Technology® cell layout

realizes high-current die and high yield.

GaNPX®

packaging enables low inductance & low thermal

resistance in a small package. The GS66504B is a bottom-

side cooled transistor that offers very low junction-to-

case thermal resistance for demanding high power

applications. These features combine to provide very

high efficiency power switching.

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GS66504B Datasheet(PDF) 1 Page - GaN Systems Inc.

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