GS66504B

Bottom-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 200402

© 2009-2020 GaN Systems Inc.

9

Submit datasheet feedback

Source Sensing

Although the package does not have a dedicated source sense pin, the GaNPX® packaging utilizes no wire bonds

so the source connection is already very low inductance. By simply using a dedicated “source sense” connection

with a PCB trace from the gate driver output ground to the Source pad in a kelvin configuration with respect to

the gate drive signal, the function can easily be implemented. It is recommended to implement a “source sense”

connection to improve drive performance.

Thermal

The substrate is internally connected to the source/thermal pad on the bottom side of the package. The

transistor is designed to be cooled using the printed circuit board. The Drain pad is not as thermally conductive

as the thermal pad. However, adding more copper under the Drain will improve thermal performance by

reducing the package temperature.

Thermal Modeling

RC thermal models are available to support detailed thermal simulation using SPICE. The thermal models are

created using the Cauer model, an RC network model that reflects the real physical property and packaging

structure of our devices. This approach allows our customers to extend the thermal model to their system by

adding extra Rθ and Cθ to simulate the Thermal Interface Material (TIM) or Heatsink.

RC thermal model:

RC breakdown of RΘJC

R

θ (°C/W)

C

θ (W∙s/°C)

R

θ1 = 0.03

C

θ1 = 4.0E-05

R

θ2 = 0.46

C

θ2 = 3.7E-04

R

θ3 = 0.48

C

θ3 = 3.25E-03

R

θ4 = 0.03

C

θ4 = 1.0E-03

For more detail, please refer to Application Note GN007 “Modeling Thermal Behavior of GaN Systems’ GaNPX®

Using RC Thermal SPICE Models” available at www.gansystems.com

Reverse Conduction

GaN Systems enhancement mode HEMTs do not need an intrinsic body diode and there is zero reverse recovery

charge. The devices are naturally capable of reverse conduction and exhibit different characteristics depending

on the gate voltage. Anti-parallel diodes are not required for GaN Systems transistors as is the case for IGBTs to

achieve reverse conduction performance.