GS66516T

Top-side cooled 650 V E-mode GaN transistor

Datasheet

Rev 210727

© 2009-2021 GaN Systems Inc.

2

Submit datasheet feedback

Absolute Maximum Ratings (Tcase = 25 °C except as noted)

Parameter

Symbol

Value

Unit

Operating Junction Temperature

TJ

-55 to +150

°C

Storage Temperature Range

TS

-55 to +150

°C

Drain-to-Source Voltage

VDS

650

V

Transient Drain-to-Source Voltage (Note 1)

VDS(transient)

750

V

Gate-to-Source Voltage

VGS

-10 to +7

V

Gate-to-Source Voltage - transient (Note 1)

VGS(transient)

-20 to +10

V

Continuous Drain Current (Tcase=25 °C)

IDS

60

A

Continuous Drain Current (Tcase=100 °C)

IDS

47

A

Pulse Drain Current (Pulse width 50 µs, VGS = 6 V)

(Note 2)

IDS Pulse

120

A

(1) For < 1 µs

(2) Defined by product design and characterization. Value is not tested to full current in production.

Thermal Characteristics (Typical values unless otherwise noted)

Parameter

Symbol

Value

Units

Thermal Resistance (junction-to-case) – top side

RΘJC

0.27

°C /W

Maximum Soldering Temperature (MSL3 rated)

TSOLD

260

°C

Ordering Information

Ordering

code

Package type

Packing

method

Qty

Reel

Diameter

Reel

Width

GS66516T-TR

GaNPX® Top-Side Cooled

Tape-and-Reel

3000

13”

(330mm)

16mm

GS66516T-MR

GaNPX® Top-Side Cooled

Mini-Reel

250

7” (180 mm)

16mm