MPQ5072

– 5.5V, 1A LOW RDS(ON) LOAD SWITCH, AEC-Q100 QUALIFIED

MPQ5072 Rev. 1.0

www.MonolithicPower.com

4

10/16/2020

MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.

© 2020 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VIN = 3.6V, VCC = 3.6V, TJ = -40ºC to +125°C, typical values are TJ = 25°C, unless otherwise noted.

Parameters

Symbol

Condition

Min

Typ

Max

Units

Input and Supply Voltage Range

Input voltage

VIN

0.5

5.5

V

Supply voltage

VCC

3

5.5

V

Supply Current

Off-state leakage current

IOFF

VIN = 5V, EN = 0, TJ = 25°C

1

µA

VIN = 5V, EN = 0,

-40°C < TJ < +125°C

5

µA

VCC standby current

ISTBY

VCC = 5V, EN = 0

0.1

1

µA

VCC = 5V, enable, no load,

TJ = 25°C

180

230

VCC = 5V, enable, no load,

-40°C < TJ < +125°C

180

250

Power FET

On resistance

RDS(ON)

VCC = 5.0V, TJ = 25°C

50

70

m

Ω

VCC = 5.0V, -40°C < TJ < +125°C

50

80

VCC = 3.3V, TJ = 25°C

60

80

VCC = 3.3V, -40°C < TJ < +125°C

60

90

Thermal Shutdown and Recovery (5)

Shutdown temperature

TSTD

150

°C

Hysteresis

THYS

30

°C

Under-Voltage Protection

VCC under-voltage lockout (UVLO)

threshold

VCC_UVLO UVLO rising threshold

2.6

2.95

V

UVLO hysteresis

VUVLO_HYS

200

mV

Soft Start (SS)

SS pull-up current

ISS

Fixed slew rate

4

11

17

µA

Enable (EN)

EN rising threshold

VENH

1.3

1.5

1.7

V

EN hysteresis

VEN_HYS

200

mV

ILIM

Current limit

IOUT

RLIM = 24

kΩ, ramp IOUT record

peak current limit value

1.4

A

Discharge Resistance

Discharge resistance

RDIS

200

Ω

Power Good (PG)

PG rising threshold

VPG_R

Voltage gap between VOUT

and VIN

140

280

450

mV

PG threshold

VPG_HYS

60

mV

PG delay

tPG_D

50

µs

PG high

VPG_H

VCC = 3.3V

3.2

V

PG low

VPG_L

Sink 1mA

0.3

V

Notes:

5) Guaranteed by design.