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BU505DF Datasheet(PDF) 5 Page - NXP Semiconductors |
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BU505DF Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  1997 Aug 13 5 Philips Semiconductors Product specification Silicon diffused power transistors BU505F; BU505DF Fig.4 Forward bias SOAR. Mounted without heatsink compound and 30 ±5 N force on centre of package. Th =25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. handbook, full pagewidth MGB931 1 10 1102 103 104 I VCE (V) 10 10−1 102 10−2 10−4 10−3 IC (A) ICM max IC max II |
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