1997 Aug 13

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BU505F; BU505DF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 package with

electrically isolated mounting base.

The BU505DF has an integrated

efficiency diode.

APPLICATIONS

• Horizontal deflection circuits of

colour television receivers.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb

mounting base; electrically

isolated from all pins

Fig.1 Simplified outline (SOT186) and symbols.

a. BU505F.

b. BU505DF.

MBC668

123

Front view

3

2

1

MBB008

3

2

1

MBB077

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30

±5 N force on centre of package.

2. Mounted with heatsink compound and 30

±5 N force on centre of package.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

collector-emitter peak voltage

−

1500

V

collector-emitter voltage

open base

−

700

V

collector-emitter saturation

voltage

−

1V

diode forward voltage

(BU505DF)

−

1.8

V

collector saturation current

−

2A

collector current (DC)

see Figs 4 and 5

−

2.5

A

collector current (peak value)

see Figs 4 and 5

−

4A

total power dissipation

−

20

W

fall time

inductive load; see Fig.10

0.7

−µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to external heatsink note 1

6.35

K/W

note 2

3.85

K/W

thermal resistance from junction to ambient

55

K/W