1997 Aug 13

3

Philips Semiconductors

Product specification

Silicon diffused power transistors

BU505F; BU505DF

ISOLATION CHARACTERISTICS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

isolation voltage from all terminals to external heatsink (peak value)

−

1500

V

isolation capacitance from collector to external heatsink

12

−

pF

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

−

1500

V

collector-emitter voltage

open base

−

700

V

collector saturation current

−

2A

collector current (DC)

see Figs 4 and 5

−

2.5

A

collector current (peak value)

see Figs 4 and 5

−

4A

base current (DC)

−

2A

base current (peak value)

−

4A

total power dissipation

−

20

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Fig.2 Power derating curve.

handbook, halfpage

050

Th (

100

150

120

0

40

80

MGK674

Ptot max

(%)

Fig.3 DC current gain; typical values.

handbook, halfpage

1

10

1

hFE

IC (A)

10

MGB875

(1)

(2)