BU505DF datasheet(4/12 Pages) PHILIPS

4 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BU505F; BU505DF

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Measured with a half-sinewave voltage (curve tracer).

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEOsust

collector-emitter sustaining voltage IC = 0.1 A; IB = 0; L = 25 mH;

see Figs 6 and 7

700

−−

VCEsat

collector-emitter saturation voltage

IC = 2 A; IB = 900 mA;

see Fig.8

−−

VBEsat

base-emitter saturation voltage

IC = 2 A; IB = 900 mA;

see Fig.9

−−

1.3

diode forward voltage (BU505DF)

IF =2A

−−

1.8

ICES

collector-emitter cut-off current

VCE =VCESmax; VBE =0;

note 1

−−

0.15

VCE =VCESmax; VBE =0;

Tj = 125 °C; note 1

−−

1mA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

1mA

hFE

DC current gain

see Fig.3

VCE = 5 V; IC = 2 A

2.22

−−

VCE = 5 V; IC = 100 mA

transition frequency

VCE =5V; IC = 100 mA;

f = 1 MHz

−

MHz

collector capacitance

VCB =10V; IE =ie =0;

f = 1 MHz

−

Switching times in horizontal deﬂection circuit (see Fig.4)

storage time

ICM = 2 A; IB(end) = 900 mA;

Vdr = −4V

LB =10 µH

−

6.5

−µs

LB =15 µH

−

7.5

−µs

LB =25 µH

−

9.5

−µs

fall time

ICM = 2 A; IB(end) = 900 mA;

Vdr = −4V

LB =10 µH

−

0.9

−µs

LB =15 µH

−

0.9

−µs

LB =25 µH

−

0.85

−µs

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