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STB100NF04 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB100NF04 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() STB100NF04 - STP100NF04 Electrical ratings 3/17 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS=0) 40 V VGS Gate-source Voltage ±20 V ID (1) 1. Current limited by package Drain-current (continuous) at Tc=25°C 120 A ID (1) Drain-current (continuous) at Tc=100°C 120 A IDM (2) 2. Pulse width limited by safe operating area. Drain-current (pulsed) 480 A PTOT Total dissipation at Tc=25°C 300 W Derating factor 2 W/°C dv/dt(3) 3. ISD ≤120A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax Peak Diode Recovery voltage slope 6 V/ns EAS (4) 4. Starting Tj=25°C, ID=60A, VDD=30V Single Pulse Avalanche Energy 1.2 J Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 13)°C/W Rthj-amb Thermal Resistance Junction-ambient (Free Air) Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C |
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