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STB100NF04 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STB100NF04
Description  N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB100NF04 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB100NF04 - STP100NF04
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source Breakdown
Voltage
ID=250µA, VGS=0
40
V
IDSS
Zero Gate Voltage Drain
Current (VGS=0)
VDS=Max Rating
VDS=Max Rating Tc=125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS=0)
VGS=±20V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
24
V
RDS(on)
Static Drain-source On
Resistance
VGS=10V, ID=50A
0.0043 0.0046
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
gfs
Forward Transconductance
VDS=15V, ID=50A
150
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, f=1MHz,VGS=0
5100
1300
160
pF
pF
pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=32V, ID=120A
VGS=10V
110
35
70
150
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise time
Turn-off delay Time
Fall Time
VDD=20V, ID=60A
RG=4.7Ω, VGS=10V
(see Figure 21)
35
220
80
50
ns
ns
ns
ns



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