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STB100NF04 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB100NF04 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 17 page ![]() STB100NF04 - STP100NF04 Electrical characteristics 5/17 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain Current Source-drain Current (pulsed) 120 480 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=120A, VGS=0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse recovery Current ISD=120A, VDD=20V, di/dt=100A/µs, Tj=150°C 75 185 5 ns nC A |
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