| Electronic Components Datasheet Search |
|
BUT12 Datasheet(PDF) 5 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
BUT12 Datasheet(HTML) 5 Page - NXP Semiconductors |
|
5 / 12 page ![]() 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A Fig.4 Forward bias SOAR. Tmb <25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. andbook, full pagewidth MGB945 10 1 102 103 1000 400 104 VCE (V) VCE (V) 10 10−1 102 10−2 10−2 10−3 IC (A) IC (A) δ = 0.01 1 ms 2 ms 5 ms 10 ms 20 ms DC 100 µs 200 µs 500 µs tp = 20 µs 50 µs III III IV I II (2) (1) IC max ICM max BUT12 BUT12A BUT12 BUT12A |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |