1997 Aug 13

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BUT12; BUT12A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

BUT12

−

850

V

BUT12A

−

1000

V

collector-emitter voltage

open base

BUT12

−

400

V

BUT12A

−

450

V

collector saturation current

BUT12

−

6A

BUT12A

−

5A

collector current (DC)

see Figs 3 and 4

−

8A

collector current (peak value)

see Fig. 4

−

20

A

base current (DC)

−

4A

base current (peak value)

−

6A

total power dissipation

−

125

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Fig.2 Power derating curve.

handbook, halfpage

050

Tmb (

100

150

120

0

40

80

MGD283

Ptot max

(%)

Fig.3 Reverse bias SOAR.

handbook, halfpage

10

0

400

IC

(A)

1200

VCE (V)

0

MGB892

800

5

BUT12F

BUT12AF