TIP112 datasheet(3/8 Pages) ONSEMI

3 / 8 page

TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0)

TIP110, TIP115

(VCE = 40 Vdc, IB = 0)

TIP111, TIP116

(VCE = 50 Vdc, IB = 0)

TIP112 ,TIP117

ICEO

−

2.0

mAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

TIP110, TIP115

(VCB = 80 Vdc, IE = 0)

TIP111, TIP116

(VCB = 100 Vdc, IE = 0)

TIP112, TIP117

ICBO

−

1.0

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

2.0

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

hFE

1000

500

−

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

VCE(sat)

−

2.5

Vdc

Base−Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

VBE(on)

−

2.8

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

hfe

−

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

Cob

−

200

100

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

100

120

160

Figure 1. Power Derating

T, TEMPERATURE (

°C)

140

2.0

1.0

3.0

TIP112 Datasheet(PDF) 3 Page - ON Semiconductor

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