1996 Jul 08

5

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

FUNCTIONAL DESCRIPTION

Operating conditions

The CGY2010G and CGY2011G are designed to meet the

European Telecommunications Standards Institute (ETSI)

GSM documents, the

“ETS 300 577 specification”, which

are defined as follows:

• T = 4.3 ms

• Duty cycle = 1/8

The devices are specifically designed for pulse operation

allowing the use of a LQFP48 plastic package.

Power amplifier

The power amplifier consists of four cascaded gain stages

with an open-drain configuration. Each drain has to be

loaded externally by an adequate reactive circuit which

also has to be a DC path to the supply.

The amplifier bias is set by means of a negative voltage

be present before the supply voltage is applied to the

drains to avoid current overstress for the amplifier.

Power sensor driver

The power sensor driver is a buffer amplifier that delivers

a signal to the DETO output pin which is proportional to the

amplifier power. This signal can be detected by external

diodes for power control purpose. As the sensor signal is

taken from the input of the last stage of the PA, it is isolated

from disturbances at the output by the reverse isolation of

the PA output stage.

Impedance mismatch at the PA output therefore, does not

significantly influence the signal delivered by the power

sensor as this normally occurs when power sense is made

using a directional coupler. Consequently the cost and

space of using a directional coupler are saved.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.

THERMAL CHARACTERISTICS

General operating conditions applied.

Note

1. This thermal resistance is measured under GSM pulse conditions.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

positive supply voltage

−

7V

negative supply voltage

−−10

V

maximum operating junction temperature

−

150

°C

IC storage temperature

−

150

°C

total power dissipation

−

1.5

W

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to case; note 1

32

K/W