CGY2011G datasheet(7/12 Pages) PHILIPS

7 / 12 page

1996 Jul 08

Philips Semiconductors

Objective speciﬁcation

GSM 4 W power ampliﬁers

CGY2010G; CGY2011G

AC CHARACTERISTICS

VDD = 4.5 V; Tamb =25 °C; general operating conditions applied; unless otherwise speciﬁed.

Notes

1. Including the 100

Ω resistor connected in parallel at the power amplifier input on the evaluation board.

2. The device is adjusted to provide nominal value of load power into a 50

Ω load. The device is switched off and a 6 : 1

load replaces the 50

Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 second period.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Power ampliﬁer

input power

−1.5

−

+1.5

dBm

S11

input return loss

note 1; 50

Ω source

−−−6dB

fRF

RF frequency range

880

−

915

MHz

Pout(max)

maximum output power

Tamb =25 °C; VDD = 4.5 V

34.5

35.5

−

dBm

Tamb = −20 to +85 °C; VDD = 4.2 V

32.5

−−

dBm

efﬁciency

VDD = 4.2 V

−

Pout(min)

minimum output power

VDD < 0.1 V

−−−20

dBm

NRX

output noise in RX band

fRF = 925 MHz at Pout(max)

−−−117

dBm/Hz

fRF = 935 MHz at Pout(max)

−−−129

dBm/Hz

fRF = 960 MHz at Pout(max)

−−−129

dBm/Hz

2nd harmonic level

−−33

−30

dBc

3rd harmonic level

−−40

−37

dBc

Stab

stability

note 2

−−−70

dBc

Power sensor driver

Pout(DET)

sensor driver output

power

RL = 100 Ω; relative to PA output

power into 50

Ω load

−−23

−

dBc

∆Pout(DET)

driver output power

variation

load VSWR

< 6 : 1 at PA output

−−

2dB

CGY2011G Datasheet(PDF) 7 Page - NXP Semiconductors

CGY2011G Datasheet(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL