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CGY2011G Datasheet(PDF) 6 Page - NXP Semiconductors |
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CGY2011G Datasheet(HTML) 6 Page - NXP Semiconductors |
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6 / 12 page ![]() 1996 Jul 08 6 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G DC CHARACTERISTICS VDD = 4.5 V; Tamb =25 °C; general operating conditions applied; peak current values during burst; unless otherwise specified. Note 1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD positive supply voltage 0 4.2 5.5 V IDD positive peak supply current − 1.8 2.2 A Pins VGG1 and VGG2 VGG1 negative supply voltage note 1 −−2 − V VGG2 negative supply voltage note 1 −−2 − V IGG1 +IGG2 negative peak supply current − 2.5 5 mA |
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