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MA5342MS Datasheet(PDF) 39 Page - Infineon Technologies AG |
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MA5342MS Datasheet(HTML) 39 Page - Infineon Technologies AG |
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39 / 64 page ![]() Datasheet 39 of 63 V 2.1 11/2/2023 Integrated Class D Amplifier MA5342MS 9.2 Control Loop Design The MA5342MS allows the user to choose from numerous methods of PWM modulator implementations. In this section, all the explanations are based on a typical application circuit of a self-oscillating 9.3 PWM Frequency Choosing the switching frequency entails making a trade-off between many aspects. At lower switching frequency, conduction losses in the MOSFET stage increases due to higher inductor ripple current. The output carrier leakage in the speaker output increases. At higher switching frequency, the efficiency degrades due to higher switching losses. Higher switching frequency supports wider audio bandwidth. The inductor ripple decreases yet core loss might increase. For these reasons, 400kHz is chosen for a typical design example. Self-oscillating frequency has little influence from the bus voltage and input resistance RIN. Note that the nature of a self-oscillating PWM is for the switching frequency to decrease as PWM modulation deviates from idling. Table 6 summarizes suggested values of components for a given target self-oscillating frequency. The front-end operational transconductance amplifier (OTA) output has limited voltage and current compliances. This set of component values ensures that OTA operates within its linear region for optimal THD+N performance. In case the target frequency is somewhere in between the frequencies listed in Table 6, simply adjust the frequency by tweaking R1. Table 10 External Component Values vs. Self-Oscillation Frequency Target Self-Oscillation Frequency (kHz) C1=C2 (nF) R1 (ohms) 500 2.2 200 450 2.2 165 400 2.2 141 350 2.2 124 300 2.2 115 250 2.2 102 200 4.7 41.2 150 10 20.0 100 10 14.0 70 22 4.42 |
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