Electrical Characteristics（TA=25℃）

( VS=5.0V, TA=+25°C, VCM=VS/2, VO=VS/2, RL=10kΩ connected to VS/2, unless otherwise noted. )

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DYNAMIC PERFORMANCE

GBW

Gain bandwidth product

f = 1kHz

10

MHz

ΦM

Phase margin

CL = 100pF

60

°

SR

Slew rate

G = +1, CL = 100pF,

VO = 1.5V to 3.5V

9

V/μs

BWP

Full power bandwidt

h

<1% distortion

400

kHz

tS

Settling time

To 0.1%, G = +1, 2V step

0.25

μs

To 0.01%, G = +1, 2V step

0.28

tOR

Overload recovery time

VIN * Gain > VS

0.5

μs

NOISE PERFORMANCE

Vn

Input voltage noise

f = 0.1 to 10 Hz

12

μVP-P

en

Input voltage noise density

f = 10kHz

20

nV/√Hz

In

Input current noise density

f = 10kHz

5

fA/√Hz

POWER SUPPLY

VS

Operating supply voltage

2.5

5.5

V

PSRR

Power supply rejection

ratio

VS = 2.7V to 5.5V,

VCM < VS+ +0.5V

70

95

dB

Over temperature

80

IQ

Quiescent current

(per amplifier)

1000

1300

μA

Over temperature

1200

1600

www.umw-ic.com

5

UTD Semiconductor Co.,Limited

LMV721, LMV722, LMV724

10MHz, RRIO CMOS Operational Amplifiers

UMW

R

TA

Operating temperature

range

-40

+

125

°C

θJA

Package thermal resistance

°C/W

SOT23-5

190

SOP-8

125

153

SC70-5

333

TSSOP-14

112

TSSOP-8

THERMAL CHARACTERISTICS

SOP-14

115

MSOP-8

216