1997 Mar 03

4

Philips Semiconductors

Product specification

NPN microwave power transistors

LBE2003S; LBE2009S;

LCE2009S

Fig.5

DC SOAR; LBE2009S, LCE2009S

handbook, halfpage

10

1

MGD990

10

20

40

IC

(mA)

(1)

(2)

(3)

VCE (V)

(1) Region of permissible DC operation.

(3) Second breakdown limit (independant of temperature).

Fig.6

Power dissipation derating as a function

of mounting-base temperature;

LBE2009S, LCE2009S.

handbook, halfpage

−50

0

P tot

(W)

200

Tmb (

4

3

1

0

2

50

100

150

MGD991

THERMAL CHARACTERISTICS

Note

1. See “

Mounting recommendations in the General part of handbook SC15”.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

thermal resistance from junction to mounting-base

LBE2003S

65

K/W

LBE2009S; LCE2009S

36

K/W

thermal resistance from mounting-base to heatsink

1.5

K/W

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15