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L640DU21NF Datasheet(PDF) 24 Page - Advanced Micro Devices |
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L640DU21NF Datasheet(HTML) 24 Page - Advanced Micro Devices |
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24 / 57 page ![]() 22 Am29LV640D/Am29LV641D 22366C6 January 22, 2007 D A TA SH EET Table 7. System Interface String Table 8. Device Geometry Definition Addresses (x16) Data Description 1Bh 0027h V CC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 0036h V CC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 0004h Typical timeout per single word write 2N µs 20h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 000Ah Typical timeout per individual block erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 0005h Max. timeout for word write 2N times typical 24h 0000h Max. timeout for buffer write 2N times typical 25h 0004h Max. timeout per individual block erase 2N times typical 26h 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Addresses (x16) Data Description 27h 0017h Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0001h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 007Fh 0000h 0000h 0001h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 0000h 0000h 0000h 0000h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) |
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