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DL161 Datasheet(PDF) 53 Page - Advanced Micro Devices

Part # DL161
Description  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
PDF  63 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

DL161 Datasheet(HTML) 53 Page - Advanced Micro Devices

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52
Am41DL16x4D
P R E L IMINARY
AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
70
85
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
85
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to CE#f Low During Toggle
Bit Polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
45
ns
t
AHT
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
35
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
30
35
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
30
35
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
7
µs
t
WHWH1
t
WHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec



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