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DL161 Datasheet(PDF) 59 Page - Advanced Micro Devices |
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DL161 Datasheet(HTML) 59 Page - Advanced Micro Devices |
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59 / 63 page  58 Am41DL16x4D P R E L IMINARY AC CHARACTERISTICS Notes: 1. UB#s and LB#s controlled, CIOs must be high. 2. tCW is measured from CE1#s going low to the end of write. 3. t WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high. 4. t AS is measured from the address valid to the beginning of write. 5. A write occurs during the overlap (t WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A write ends at the earliest transition when CE1#s goes high and WE# goes high. The t WP is measured from the beginning of write to the end of write. Figure 32. SRAM Write Cycle—UB#s and LB#s Control Address Data Valid UB#s, LB#s WE# Data In Data Out High-Z High-Z tWC CE1#s CE2s tAW tBW tDW tDH tWR (See Note 3) tAS (See Note 4) tCW (See Note 2) tCW (See Note 2) tWP (See Note 5) |
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