DL162 datasheet(39/63 Pages) AMD

39 / 63 page

Am41DL16x4D

P R E L IMINARY

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.

2. Maximum I

CC specifications are tested with VCC = VCCmax.

3. ICC active while Embedded Erase or Embedded Program is in progress.

4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is

200 nA.

5. Not 100% tested.

VLKO

Flash Low VCC Lock-Out Voltage

(Note 5)

2.3

2.5

SRAM DC AND OPERATING CHARACTERISTICS

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Leakage Current

VIN = VSS to VCC

–1.0

1.0

µA

Output Leakage Current

CE1#s = V

IH, CE2s = VIL or OE# =

IH or WE# = VIL, VIO= VSS to VCC

–1.0

1.0

µA

CC1s

Average Operating Current

Cycle time = 1 µs, 100% duty,

IO = 0 mA, CE1#s ≤ 0.2 V,

CE2

≥ V

CC – 0.2 V, VIN ≤ 0.2 V or

IN ≥ VCC – 0.2 V

3mA

CC2s

Average Operating Current

Cycle time = Min., I

IO = 0 mA,

100% duty, CE1#s = V

IL, CE2s =

IH, VIN = VIL = or VIH

VOL

Output Low Voltage

IOL = 2.1 mA

0.4

Output High Voltage

OH = –1.0 mA

2.4

SB1

Standby Current (CMOS)

CE1#s

≥ V

CC – 0.2 V, CE2 ≥ VCC –

0.2 V (CE1#s controlled) or 0 V

≤

CE2

≤ 0.2 V (CE2s controlled),

CIOs = V

SS or VCC, Other input = 0

~ V

µA

DC CHARACTERISTICS (Continued)

CMOS Compatible

Parameter

Symbol

Parameter Description

Test Conditions

Min

Typ

Max

Unit

DL162 Datasheet(PDF) 39 Page - Advanced Micro Devices

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