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FP150R07N3E4 Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

Part # FP150R07N3E4
Description  IGBT Modules
PDF  7 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FP150R07N3E4 Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

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ISGM2047
eq FP150R07N3E4
IGBT Modules
www.iscsemi.com
3
DIODE, RECTIFIER
MAXIMUM RATED VALUES (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1800
V
IFAV
Forward Current per Diode
100
A
IFSM
Surge Forward Current@tp = 10 ms, half sine wave
TJ = 25°C
960
A
TJ
Operating Junction Temperature
-40-150
℃
IGBT, BRAKE-CHOPPER
MAXIMUM RATED VALUES(TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±
30
V
IC
Collector Current-Continuous
@ TC= 80℃
100
A
ICM
Repetitive Peak Collect Current@tp = 1 ms
200
A
Ptot
Total Power Dissipation ,
TC= 25℃
330
W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCES
Collector-Emitter
Breakdown
Voltage
VGE=0, IC= 0.25mA
650
-
-
V
VGE(TH)
Gate-Emitter Threshold Voltage
VGE= VCE, IC= 1.6mA
5.2
-
6.6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 150A, VCE= 15V,
TC= 25℃
-
1.9
2.25
V
IC= 150A, VCE= 15V,
TC= 125℃
-
2.4
-
V
ICES
Zero Gate Voltage Collector Current
VCE= 650V, VGE=0
-
-
1.0
mA



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