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FP150R07N3E4 Datasheet(PDF) 4 Page - Inchange Semiconductor Company Limited

Part # FP150R07N3E4
Description  IGBT Modules
PDF  7 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FP150R07N3E4 Datasheet(HTML) 4 Page - Inchange Semiconductor Company Limited

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ISGM2047
eq FP150R07N3E4
IGBT Modules
www.iscsemi.com
4
IGES
Gate-Emitter Leakage Current
VGE= VGES, VCE=0
-
-
±500
nA
Cies
Input Capacitance
VGE = 0V,
VCS = 25V,
f = 1.0MHz
-
8.5
-
nF
Cres
Reverse Transfer Capacitance
-
0.11
-
QG
Gate Charge
VGE= +15V...-15V
-
120
-
nC
TJ
Operating Junction Temperature
-40
-
150
℃
ISC
SC Data
VCC= 300V, VGE≤ 15V,
tp≤ 10us,TJ= 125℃
-
300
-
A
SWITCHING CHARACTERISTICS(TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
td(on)
Turn-on Delay Time
VGE = ±15V,
IC= 100A,
VCE = 300V,
RG= 8.2Ω
L = 100 nH,
TJ=25℃
-
95
-
ns
tr
Turn-on Rise Time
-
26
-
td(off)
Turn-off Delay Time
-
240
-
tf
Turn-off Fall Time
-
175
-
Eon
Turn-on switching losses
-
2.2
-
mJ
Eoff
Turn-off switching losses
-
3.4
-
DIODE, BRAKE-CHOPPER
MAXIMUM RATED VALUES (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
650
V
IF
Diode Continuous Forward Current
50
A
IFRM
Repetitive Peak Forward Current @tp = 1 ms
100
A
TJ
Operating Junction Temperature
-40-150
℃
ELECTRICAL CHARACTERIS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VF
Diode Forward Voltage
IF= 50A, TC=25℃
-
1.45
1.95
V
VF
Diode Forward Voltage
IF= 50A, TC=125℃
-
1.65
-
V



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