FP150R07N3E4 datasheet(1/7 Pages) ISC

Part #	FP150R07N3E4

Description	IGBT Modules

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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1 / 7 page

ISGM2047

eq FP150R07N3E4

IGBT Modules

www.iscsemi.com

1

FEATURES

· Trench Field Stop technology

· Free wheeling diodes with fast and soft

reverse recovery

· Industrial standard package with copper

base plate

APPLICATIONS

· Motor Drives ,Motion / Servo Drives

· Inverter and Power supplies

IGBT, INVERTER

MAXIMUM RATED VALUES(TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

650

V

VGES

Gate-Emitter Voltage

±

30

V

IC

Collector Current-Continuous

@ TC= 80℃

150

A

ICM

Repetitive Peak Collect Current @tp = 1 ms

300

A

Ptot

Total Power Dissipation ,

TC=25℃

430

W

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage VGE=0, IC= 0.25mA

650

-

V

VGE(TH)

Gate-Emitter Threshold Voltage

VGE= VCE, IC= 2.6mA

5.2

-

6.6

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 150A, VCE= 15V,

TC= 25℃

-

1.90

1.95

V

IC= 150A, VCE= 15V,

TC= 125℃

-

2.4

-

V

ICES

Zero Gate Voltage Collector Current

VCE= 650V, VGE=0

-

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE= VGES, VCE=0

-

±500

nA

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