TIL3009, TIL3010, TIL3011, TIL3012

OPTOCOUPLERS/OPTOISOLATORS

SOES027A – DECEMBER 1987 – REVISED APRIL 1998

2

POST OFFICE BOX 655303

electrical characteristics 25

°C free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

IR

Static reverse current

VR = 3 V

0.05

100

µA

VF

Static forward voltage

IF = 10 mA

1.2

1.5

V

IDRM

Repetitive off-state current, either direction

VDRM = 250 V, See Note 5

10

100

nA

dv/dt

Critical rate of rise of off-state voltage

See Figure 1

12

V/

µs

dv/dt(c)

Critical rate of rise of commutating voltage

IO = 15 mA,

See Figure 1

0.15

V/

µs

TIL3009

15

30

IFT

Input trigger current either direction

TIL3010

Output supply voltage=3V

8

15

mA

IFT

Input trigger current either direction

TIL3011

Output supply voltage = 3 V

5

10

mA

TIL3012

5

VTM

Peak on-state voltage, either direction

ITM = 100 mA

1.8

3

V

IH

Holding current, either direction

100

µA

NOTE 5: Test voltage must be applied within dv/dt rating.

PARAMETER MEASUREMENT INFORMATION

NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased

until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:

The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and

increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input

pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs

can then be used to calculate the dv/dt(c) according to the formula shown above.

dv dt

+ 22 p fV

in

1

2

4

6

RL

Vin = 30 V rms

10 k

Ω

VCC

Input

(see Note A)

2N3904

Figure 1. Critical Rate of Rise Test Circuit